Researchers at Fudan University have developed the world’s fastest non-volatile flash memory, dubbed “PoX,” capable of writing a single bit in just 400 picoseconds equivalent to 25 billion operations per second.

 

 

Researchers at Fudan University have developed the world’s fastest non-volatile flash memory, dubbed “PoX,” capable of writing a single bit in just 400 picoseconds—equivalent to 25 billion operations per second. 

 

This breakthrough, published in Nature, brings flash memory speeds into the realm of volatile memory like SRAM and DRAM, but with the advantage of data retention without power. 

 

Using graphene channels and AI-driven process optimization, the team bypassed traditional speed limits through a novel charge injection mechanism. With massive potential for edge AI, smartphones, and instant-on computing, PoX could eliminate SRAM in AI chips, reduce power usage, and strengthen China's semiconductor leadership.

 

Engineers are now scaling the technology for real-world deployment.